BLF8G27LS-140V
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General des...
BLF8G27LS-140V
Power LDMOS
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 32 45
17.4 30 32 [1]
2-carrier W-CDMA
2600 to 2700
1300 28 35
17.0 29 33 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth (100 MHz typical) Lower output capacitance for improved performance in Doherty applications ...
