BLF8G27LS-140

BLF8G27LS-140 Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 32 30 [1] 2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 31 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  In...