BLF8G22LS-200V; BLF8G22LS-200GV
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile...
BLF8G22LS-200V; BLF8G22LS-200GV
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 2000 28 55
19.0 29 30 [1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation Decoupling leads to enable improved video bandwidth (80 MHz typical) Lower output capacitance for improved performance in Doherty applications D...
