BLF8G19LS-170BV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General de...
BLF8G19LS-170BV
Power LDMOS
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA [1]
1930 to 1990
1300 32 60
18.0 32 31
1-carrier W-CDMA [2]
1805 to 1880
1300 28 33
19.8 29 40
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
[2] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth (100 M...
