BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1....
BLF7G20L-200; BLF7G20LS-200
Power LDMOS
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18 33 29 [1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of ...