BLC10G27LS-320AVT
Power LDMOS transistor
Rev. 2 — 1 December 2017
Product data sheet
1. Product profile
1.1 General d...
BLC10G27LS-320AVT
Power LDMOS
transistor
Rev. 2 — 1 December 2017
Product data sheet
1. Product profile
1.1 General description
320 W LDMOS packaged asymmetrical Doherty power
transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
1-carrier W-CDMA
2500 to 2700 28
50
16
D (%) 45
ACPR (dBc) 30 [1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD prote...
