DatasheetsPDF.com

BLC9G20XS-400AVT

Part Number	BLC9G20XS-400AVT
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC9G20XS-400AVT Power LDMOS transistor Rev. 3 — 24 November 2017 Product data sheet 1. Product profile 1.1 General d...
Datasheet	BLC9G20XS-400AVT PDF File

Overview

BLC9G20XS-400AVT Power LDMOS transistor Rev.
3 — 24 November 2017 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.
5 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 32 87 16.
2 45 39 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
6 d...

Similar Datasheet

BLC9G20XS-400AVT Power LDMOS transistor - Ampleon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)