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BLC9G20XS-160AV

Part Number	BLC9G20XS-160AV
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC9G20XS-160AV Power LDMOS transistor Rev. 3 — 24 May 2017 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet	BLC9G20XS-160AV PDF File

Overview

BLC9G20XS-160AV Power LDMOS transistor Rev.
3 — 24 May 2017 Product data sheet 1.
Product profile 1.
1 General description 160 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo test circuit.
VDS = 30 V; IDq = 300 mA (main); VGS(amp)peak = 0.
7 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 30 28 16.
6 47 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01% probability on CCDF per carrier.
1.
2 Features ...

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BLC9G20XS-160AV Power LDMOS transistor - Ampleon

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