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BLC8G27LS-160AV

Part Number	BLC8G27LS-160AV
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC8G27LS-160AV Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet	BLC8G27LS-160AV PDF File

Overview

BLC8G27LS-160AV Power LDMOS transistor Rev.
5 — 24 May 2017 Product data sheet 1.
Product profile 1.
1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.
Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 31.
6 14.
5 D (%) 43 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent therma...

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BLC8G27LS-160AV Power LDMOS transistor - Ampleon

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