BLC8G21LS-160AV
Power LDMOS transistor
Rev. 4 — 24 May 2017
Product data sheet
1. Product profile
1.1 General descrip...
BLC8G21LS-160AV
Power LDMOS
transistor
Rev. 4 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS
transistor for base station applications at frequencies from 1805 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.
Test signal
f
IDq VDS PL(AV)
(MHz)
(mA) (V) (W)
1-carrier W-CDMA
1805 to 1880
350 28 22
1-carrier W-CDMA
1880 to 2025
350 28 22
Gp D ACPR (dB) (%) (dBc) 16 49 30 [1] 15.5 47 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Designed for broadband operation (1805 MHz to 2025 MHz) Decoupling leads to enable improved video bandwidth Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substa...
