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BLC8G20LS-400AV Dataheets PDF



Part Number BLC8G20LS-400AV
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC8G20LS-400AV DatasheetBLC8G20LS-400AV Datasheet (PDF)

BLC8G20LS-400AV Power LDMOS transistor Rev. 4 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D.

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