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BLS9G2729L-350 Dataheets PDF



Part Number BLS9G2729L-350
Manufacturers Ampleon
Logo Ampleon
Description LDMOS S-band radar power transistor
Datasheet BLS9G2729L-350 DatasheetBLS9G2729L-350 Datasheet (PDF)

BLS9G2729L-350: BLS9G2729LS-350 LDMOS S-band radar power transistor Rev. 1 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.7 to 2.9 28 320 14 50 1.2 Features .

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BLS9G2729L-350: BLS9G2729LS-350 LDMOS S-band radar power transistor Rev. 1 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.7 to 2.9 28 320 14 50 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operations  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  High flexibility with respect to pulse formats  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range from 2.7 G.


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