BLS6G3135-20

BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) Pulsed RF 3.1 to 3.5 32 20 15.5 45 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a  of 10 %:  Output power = 20 W  Power gain = 15.5 dB  Efficiency = 45 %  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent ...