BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Produc...
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power
transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA; in a class-AB production test circuit.
Mode of operation f
VDS
PL
Gp
D
tr
tf
(GHz) (V)
(W)
(dB)
(%)
(ns) (ns)
Pulsed RF
3.1 to 3.5 32 20 15.5 45 20 10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a of 10 %: Output power = 20 W Power gain = 15.5 dB Efficiency = 45 %
Integrated ESD protection Excellent ruggedness High efficiency Excellent ...