Document
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.
Table 1. Application information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA.
Test signal
f
VDS
PL
Gp
D
(GHz)
(V)
(W) (dB) (%)
tr (ns)
tf (ns)
Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz
pulsed RF
3.1 to 3.5 32 30 13 50 20 10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz
pulsed RF
2.7 to 3.3 32 35 14 50 20 10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz
pulsed RF
2.7 to 3.5 32 30 12 47 20 10
1.2 Features and benefits
Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (.