BLL8H1214L-250; BLL8H1214LS-250
LDMOS L-band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Pr...
BLL8H1214L-250; BLL8H1214LS-250
LDMOS L-band radar power
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50
250
17 55
15
5
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar ap...
