BLL6H1214L-250; BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Pr...
BLL6H1214L-250; BLL6H1214LS-250
LDMOS L-band radar power
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50
250
17 55
15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with of 10 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %
Easy power control Integrated ESD protection High flexibility with r...