BLL6H1214LS-500

BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 500 17 50 20 6 1.2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.2 GHz to 1.4 GHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications  L-band power amplifiers for radar applications...