BLL6H0514-25

BLL6H0514-25 LDMOS driver transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp  VDS PL Gp RLin D (MHz) (s) (%) (V) (W) (dB) (dB) (%) pulsed RF 960 to 1215 128 10 50 25 21 10 58 1200 to 1400 300 10 50 25 19 10 50 Pdroop(pulse) (dB) 0.05 0.05 tr tf (ns) (ns) 86 86 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (0.5 GHz to 1.4 GHz)  Compliant to Directive 20...