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BLL6G1214L-250

Part Number	BLL6G1214L-250
Manufacturer	Ampleon
Description	LDMOS L-band radar power transistor
Published	Apr 26, 2018
Detailed Description	BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 3 — 28 January 2016 Product data sheet 1. Product profile 1.1...
Datasheet	BLL6G1214L-250 PDF File

Overview

BLL6G1214L-250 LDMOS L-band radar power transistor Rev.
3 — 28 January 2016 Product data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 1 ms;  = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.
2 to 1.
4 36 250 15 45 15 5 1.
2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  ...

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BLL6G1214L-250 LDMOS L-band radar power transistor - Ampleon

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