BLA9G1011LS-300G

BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS transistor Rev. 1 — 25 July 2017 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 32 317 20.6 63.5 14 5 1060 32 317 21.5 64.8 14 5 1090 32 317 21.8 64.8 14 5 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Avi...