DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF470; BF472 PNP high-voltage transistors
Product specificati...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF470; BF472
PNP high-voltage
transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09
Philips Semiconductors
Product specification
PNP high-voltage
transistors
FEATURES Low feedback capacitance.
handbook, halfpage
BF470; BF472
APPLICATIONS Class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
1 2 3 Top view
2 3 1
MAM272
PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION Fig.1 Simplified outline (TO-126; SOT32) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF470 BF472 VCEO collector-emitter voltage BF470 BF472 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 114 °C IC = −25 mA; VCE = −20 V IC = ic = 0; VCE = −30 V; f = 1 MHz IC = −10 mA; VCE = −10 V; f = 100 MHz open base − − − − 50 − 60 −250 −300 −100 1.8 − 1.8 − pF MHz V V mA W open emitter − − −250 −300 V V CONDITIONS MIN. MAX. UNIT
1996 Dec 09
2
Philips Semiconductors
Product specification
PNP high-voltage
transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF470 BF472 VCEO collector-emitter voltage BF470 BF472 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base vo...