BLA8H0910L-500; BLA8H0910LS-500
Power LDMOS transistor
Rev. 1 — 7 February 2017
Product data sheet
1. Product profile
...
BLA8H0910L-500; BLA8H0910LS-500
Power LDMOS
transistor
Rev. 1 — 7 February 2017
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS power
transistor for avionics applications at frequencies from 900 MHz to 930 MHz.
The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages.
Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit.
Test signal
f
VDS
PL
Gp
(MHz)
(V) (W) (dB)
CW [1]
915 50 500 18
CW pulsed [2][3]
915 50 500 19.5
[1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s; = 10 %.
D (%) 61 62.5
1.2 Features and benefits
High efficiency Easy power control Excellent ruggedness Integrated ESD protection Designed for broadband operation (900 MHz to 930 MHz) Internally input matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 ...
