BLA6H0912L-1000; BLA6H0912LS-1000
LDMOS avionics power transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Prod...
BLA6H0912L-1000; BLA6H0912LS-1000
LDMOS avionics power
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
1000W LDMOS pulsed power
transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB application circuit.
Test signal
f (MHz)
VDS
PL
(V) (W)
Gp (dB)
D tr (%) (ns)
tf (ns)
pulsed RF
1030
50 1000 16
52 11
5
1.2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (960 MHz to 1215 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Ap...