Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High current gain bandwidth product. power d...
Production specification
Silicon Epitaxial Planar
Transistor
FEATURES
High current gain bandwidth product. power dissipation.(PC=200mW)
Pb
Lead-free
S9018W
APPLICATIONS
NPN epitaxial silicon
transistor.
ORDERING INFORMATION
Type No.
Marking
S9018
J8
SOT-323 Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
25 V 18 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current -Continuous
50 mA
PC Collector Dissipation
200 mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions MIN TYP MAX
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
25
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
18
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
4
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
Collector cut-off ...
