Silicon N-Channel MOSFET Tetrode
BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz ...
Description
BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BF 2030
Marking Ordering Code NEs Q62702-F1773
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package SOT-143
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 76 °C Storage temperature Channel temperature Symbol Value 14 40 10 7 200 -55 ...+150 150 V mW °C Unit V mA
VDS ID
±I G1/2SM +VG1SE
Ptot T stg T ch
Thermal Resistance Channel - soldering point
Rthchs
≤370
K/W
Semiconductor Group Semiconductor Group
11
Mar-16-1998 1998-11-01
BF 2030
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 12 8.5 8.5 max. 50 50 12 0.8 0.7 -
Unit
V(BR)DS
+V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS
0.3 0.3
V
I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage
+I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current
V nA
VG1S = 6 V, V G2S = 0 V
Gate 2 source leakage current
VG2S = 8 V, V G1S = 0 V, V DS = 0 V
Drain current
I DSS I DSX VG2S(p) VG1S(p)
µA mA V
VDS = 5 V, V G1S = 0 , V G2S = 4.5 V Drain-source current VDS = 5 V, V G2S = 4.5 , R...
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