BF2000W

BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 3 4 2 1 VPS05605 Type Marking Ordering Code Q62702-F1772 Pin Configuration 1=D 2=S 3 = G1 4 = G2 Package SOT-343 BF 2000W NDs Maximum Ratings Parameter Drain-source voltage Symbol Value 12 30 10 200 - 55 ...+150 150 Unit V mA mW °C VDS ID ±I G1/2SM Continuos drain current Gate 1/gate 2 peak source current Total power dissipation, T S = 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤280 K/W Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -17-1998 BF 2000W Electrical Characteristics at TA = 25 °C; unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 0.3 0.2 max. 12 12 50 50 1 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS ±I G1SS ±I G2SS 12 8 8 - V I D = 10 µA, -VG1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±VG2S = 5 V, V G1S = 0 V, V DS = 0 V Drain current nA I DSS VG1S(p) VG2S(p) µA V VDS = 5 V, V G1S = 0 , V G2S = 4 V Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 200 µA Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA Semic...