DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BF199 NPN medium frequency transistor
Product specification S...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BF199
NPN medium frequency
transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 07
Philips Semiconductors
Product specification
NPN medium frequency
transistor
FEATURES Low current (max. 25 mA) Low voltage (max. 25 V). APPLICATIONS Output stage of a vision IF amplifier. DESCRIPTION
NPN medium frequency
transistor in a TO-92; SOT54 plastic package.
1 handbook, halfpage
BF199
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
2 3
3 1 2
MAM258
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 7 mA; VCE = 10 V IC = 5 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 38 − MIN. − − − − − 550 TYP. MAX. 40 25 25 500 − − MHz UNIT V V mA mW
1997 Jul 07
2
Philips Semiconductors
Product specification
NPN medium frequency
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VBE Cre fT PARAMETER coll...