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SS8550

GME

PNP Transistor

Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A)  Complementary To SS8050. Pb Lead-free  ...


GME

SS8550

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Description
Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A)  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W (TC=25°C) APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking SS8550 Y2 Production specification SS8550 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -6 IC Collector Current -Continuous -1.5 PC Collector Dissipation 0.3 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A W ℃ C087 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor SS8550 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,...




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