BF1211

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Excellent low frequency noise performance Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. BF1211; BF1211R; BF1211WR PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRIPTION source handbook, 2 columns 4 3 1 2 MSB014 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. Top view BF1211 marking code: LFp Fig.1 Simplified outline (SOT143B). handbook, 2 columns 3 4 handbook, halfpage 3 4 2 Top view BF1211R marking code: LHp 1 2 MSB035 1 MSB842 Top view BF1211WR marking code: MK Fig.2 Simplified outline (SOT143R). Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipatio...