MMBTA55

PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN types available (MMBTA05/MMBTA06). Pb Lead-free Production specification MMBTA55/A56 APPLICATIONS  Ideal for medium NPN amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA55 MMBTA56 2H 2GM SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter MMBTA55 MMBTA56 VCBO collector-base voltage -60 -80 VCEO collector-emitter voltage -60 -80 VEBO emitter-base voltage -4 IC collector current (DC) -0.5 PC RθJA Tj ,Tstg Collector dissipation Thermal Resistance, Junction to Ambient junction and storage temperature 0.35 417 -55 to +150 UNIT V V V A W °C/W °C C123 Rev.A www.gmesemi.com 1 Production specification PNP General Purpose Transistor MMBTA55/A56 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. UNIT Collector-base breakdo...