BF1102

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads. The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. handbook, halfpage BF1102 PINNING - SOT363 PIN 1 2 3 4 5 6 gate 1 (1) gate 2 (1,2) drain (1) drain (2) source (1,2) gate 1 (2) DESCRIPTION g2 (1, 2) 6 5 4 g1 (1) AMP1 d (1) g1 (2) 1 2 3 Marking code: W1. AMP2 d (2) s (1, 2) MBL029 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − Ts ≤ 102 °C; note 1 ID = 15 mA ID = 15 mA f = 1 MHz f = 800 MHz − − − − − − TYP. − − − 43 2.8 30 − −...