BF1005SR

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5 V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF1005S SOT143 1=S 2=D 3=G2 4=G1 - - BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - Marking NZs NZs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel temperature VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch 8 25 10 3 200 -55 ... 150 150 V mA V mW °C 1Pb-containing package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 2007-04-20 BF1005S... Thermal Resistance Parameter Channel - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±VG2S = 8 V, VG1S = 0 , ...