Document
BCW61A/B/C/D
BCW61A/B/C/D
General Purpose Transistor
3
2
SOT-23 1 1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
TSTG
Storage Temperature
• Refer to KST5086 for graphs
Value -32 -32 -5.0 -100 350
-55 ~ 150
Units V V V mA
mW °C
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BCW61A/B/C/D
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO BVEBO ICES hFE
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D
IC= -2mA, IB=0 IE= -1µA, IC=0 VCB= -32V, VBE=0 VCE= -5V, IC= -10µA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -50mA
VC.