BCW60A

BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Value 32 32 5 100 350 150 Units V V V mA mW °C ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO BVEBO ICES IEBO hFE Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D IC=2mA, IB=0 IE=1µA, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2mA VCE=1V, IC=50mA VCE(sat) VBE(sat) VBE(on) Co...