TC58FVM7T2AFT65

TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M × 8 BITS / 8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES Power supply voltage Access Time (Random/Page) VDD = 2.3 V~3.6 V Operating temperature TC58FVM7T2A/B2AFT65 TC58FVM7T2A/B2AFT80 Ta = −40°C~85°C VDD CL = 30 pF CL = 100 pF CL = 30 pF CL = 100 pF Organization 16M × 8 bits/8M × 16 bits Functions Simu...