Document
General Description
The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
High power and current handing capability
Typical Application
BPM0306CG
30V Complementary MOSFET
Application
H-bridge Inverters
Ordering Information
N-channel
P-channel
Figure 1. Schematic Diagram
Part Number
Package
Operating Temperature
Packing Type
BPM0306CG
SOP-8
-40 ℃ to 105 ℃
Tape & Reel 4,000pcs/Reel
Marking
BPM0306 XXXXXY CGXWW
BPM0306CG_EN_DS_Rev.1.0
www.bpsemi.com BPS Confidential – Customer Use Only
1
BPM0306CG
30V Complementary MOSFET
Pin Configuration and Marking Information
S1 1 G1 2 S2 3 G2 4
BPM0306 XXXXXY CGXWW
8 D1 7 D1 6 D2 5 D2
XXXXXY: Lot Code CG: Package Code X: Year .