BDX63 BDX63A BDX63B BDX63C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. ...
BDX63 BDX63A BDX63B BDX63C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER
TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base
transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
16.9
10.9
12.8
TO3 Package. Case connected to collector.
PNP complements are: BDX62, BDX62A, BDX62B, BDX62C.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5
ì ï ï
VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc.
Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation at Tcase= 25°C Maximum junction temperature Storage junction temperature Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
V V V A A mA W °C °C
100 5
ï ï
120 5 8 12
í ï ï
140 5
ï ï î
150 90 200 -65 to 200 1.94
°C / W
Prelim. 7/93
BDX63 BDX63A BDX63B BDX63C
ELECTRICAL CHARACTERISTICS (Tj = 25°C,
Parameter
ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (note 1) Base - emitter voltage (note 1) Collector - emitter saturation voltage Collector capacitance Cut-off frequency Turn-off ...