BDX53B - BDX53C BDX54B - BDX54C
Complementary power Darlington transistors
Features
■ Good hFE linearity ■ High fT freq...
BDX53B - BDX53C BDX54B - BDX54C
Complementary power Darlington
transistors
Features
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Audio amplifiers ■ Linear and switching industrial equipment
Description
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C
Marking BDX53B BDX53C BDX54B BDX54C
R1 typ.= 10 kΩ
R2 typ.= 150 Ω
Package TO-220
Packaging Tube
October 2007
Rev 4
1/7
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Electrical ratings
1 Electrical ratings
BDX53B - BDX53C - BDX54B - BDX54C
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
NPN
VCBO VCEO VEBO
IC ICM IB PTOT Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (repetitive) Base current Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature
PNP
For
PNP types voltage and current values are negative.
Value
BDX53B BDX53C
BDX54B BDX54C 80 100 80 100 5 8 12 0.2 60 -65 to 150 150
Unit
V V V A A mA W °C °C
2/7
BDX53B - BDX53C - BDX54B - BDX54C
2 Electrical characteristics
Electrical characteristics
Note:
(TCASE=25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Uni...