BDX53C

BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDX53 : BDX53A : BDX53B : BDX53C VCEO Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Value 45 60 80 100 45 60 80 100 5 8 12 0.2 60 150 - 65 to 150 March 2011 Units V V V V V V V V V A A A W °C °C © 2011 Fairchild Semiconductor Corporation BDX53/A/B/C Rev. B0 1 www.fairchildsem...