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TIP112

Part Number	TIP112
Manufacturer	GME
Description	NPN Epitaxial Silicon Darlington Transistor
Published	Apr 10, 2018
Detailed Description	Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 FEATURES  Monolithic Construction With B...
Datasheet	TIP112 PDF File

Overview

Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors.
 Complementary to TIP117.
Pb Lead-free  High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
 Low Collector-Emitter Saturation Voltage.
 Industrial Use.
TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ TC=25℃ 100 V 5V 2 A 4 50 mA 2 W 50 -65 to +150 ℃ ...

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