BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
Darlington Complementary Silicon Power Transistors
These devices are designed...
BDX33B, BDX33C (
NPN) BDX34B, BDX34C (
PNP)
Darlington Complementary Silicon Power
Transistors
These devices are designed for general purpose and low speed switching applications.
Features
High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 Collector−Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt Resistors These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C
Symbol VCEO
Value
80 100
Unit Vdc
Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C
VCB Vdc 80
100
Emitter−Base Voltage
Collector Current Continuous Peak
VEB 5.0 Vdc
IC 10 Adc 15
Base Current
IB 0.25 Adc
Total Device Dissipation @ TC = 25°C
PD
70 W
Derate above 25°C
0...