Darlington Complementary Silicon Power Transistors
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Darlington Complementary Silicon Power Transistors
. . . designed for general purpose and low speed switching applications. High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 V...
