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BDX33C Dataheets PDF



Part Number BDX33C
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet BDX33C DatasheetBDX33C Datasheet (PDF)

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C • Monolithic Construct.

  BDX33C   BDX33C


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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C • Monolithic Construction with Build−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO Value 80 100 Unit Vdc Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C VCB Vdc 80 100 Emitter−Base Voltage Collector Current Continuous Peak VEB 5.0 Vdc IC 10 Adc 15 Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25°C PD 70 W Derate above 25°C 0.


BDX33C BDX33C BDX34


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