BDW94B

BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94A : BDW94B : BDW94C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 12 - 15 - 0.2 80 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW94/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BDW94 : BDW94A : BDW94B : BDW94C Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C ICEO Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 45V, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCE = - 100V, IB = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = -3A VCE = - 3V, IC = - 5A VCE = - 3V, IC = - 10A IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA IF = - 5A IF = -1 0A - 1.3 - 1.8 1000 750 100 -1 -1 -1 -1 -2 20000 -2 -3 - 2.5 -4 -2 -4 V V V V V V mA mA mA mA mA VCB ...