BDW94/C PNP Epitaxial Silicon Transistor
BDW94/C
PNP Epitaxial Silicon Transistor
Power Linear and Switching Applicatio...
BDW94/C
PNP Epitaxial Silicon
Transistor
BDW94/C
PNP Epitaxial Silicon
Transistor
Power Linear and Switching Application
Power Darlington TR Complement to BDW93 and BDW93C Respectively
January 2005
1 TO-220 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BDW94 : BDW94C
VCEO
Collector-Emitter Voltage : BDW94 : BDW94C
IC ICP IB PC TJ TSTG
Collector Current (DC) Collector Current (Pulse) * Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature
Value
-45 -100
-45 -100 -12 -15 -0.2 80 150 -65 ~ 150
Units
V V
V V A A A W °C °C
©2005 Fairchild Semiconductor Corporation BDW94/C Rev. B
1
www.fairchildsemi.com
BDW94/C
PNP Epitaxial Silicon
Transistor
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VCEO(sus)
ICBO
ICEO
IEBO hFE
Collector-Emitter Sustaining Voltage : BDW94 : BDW94C
Collector Cut-off Curr...