BDW94

BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C Respectively January 2005 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDW94 : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94C IC ICP IB PC TJ TSTG Collector Current (DC) Collector Current (Pulse) * Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Value -45 -100 -45 -100 -12 -15 -0.2 80 150 -65 ~ 150 Units V V V V A A A W °C °C ©2005 Fairchild Semiconductor Corporation BDW94/C Rev. B 1 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions VCEO(sus) ICBO ICEO IEBO hFE Collector-Emitter Sustaining Voltage : BDW94 : BDW94C Collector Cut-off Curr...