BDW93CF

BDW93CF BDW93CF Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94CF respectively 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 100 100 12 15 0.2 30 150 - 65 ~ 150 Units V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO(sus) ICBO ICEO IEBO hFE Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 100mA, IB = 0 VCB = 100V, IE = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A IC = 5A, IB = 20mA IC = 10A, IB = 100mA IC = 5A, IB = 20mA IC = 10A, IB = 100mA IF = 5A IF = 10A 1.3 1.8 1000 750 100 Min. 100 Typ. Max. 100 1 2 20000 2 3 2.5 4 2 4 V V V V V V Units V µA mA mA VCE(sat) VBE(sat) VF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage * Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW93CF Typical characteristics 100k 10 VCE = 3V IC= 250 IB 10k VCE(sat) [V], SATURATION VOLTAGE 1 10 100 hFE, DC C...