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BDW64C Dataheets PDF



Part Number BDW64C
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description PNP SILICON POWER DARLINGTONS
Datasheet BDW64C DatasheetBDW64C Datasheet (PDF)

BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless othe.

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BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW64 BDW64A Collector-base voltage (IE = 0) BDW64B BDW64C BDW64D BDW64 BDW64A Collector-emitter voltage (IB = 0) (see Note 1) BDW64B BDW64C BDW64D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -6 -0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW64 V (BR)CEO Collector-emitter breakdown voltage BDW64A IC = -30 mA IB = 0 (see Note 5) BDW64B BDW64C BDW64D VCE = -30 V ICEO Collector-emitter cut-off current V CE = -30 V V CE = -40 V V CE = -50 V V CE = -60 V VCB = -45 V V CB = -60 V V CB = -80 V V CB = -100 V ICBO Collector cut-off current V CB = -120 V V CB = -45 V V CB = -60 V V CB = -80 V V CB = -100 V V CB = -120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = V CE = VCE = IB = IB = IE = -5 V -3 V -3 V -3 V -12 mA -60 mA -6 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -2 A IC = -6 A IC = -2 A IC = -2 A IC = -6 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 -2.5 -2.5 -4 -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW64 BDW64A BDW64B BDW64C BDW64D BDW64 BDW64A BDW64B BDW64C BDW64D BDW64 BDW64A BDW64B BDW64C BDW64D MIN -45 -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 -2 20000 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -3 A V BE(off) = 4.5 V IB(on) = -12 mA RL = 10 Ω † MIN IB(off) = 12 mA tp = 20 µs, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 40000 TCS125AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 TCS125AE hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 -1·0 1000 -0·5 TC = -40°C TC = 25°C TC = 100°C 0 -0·5 -1·0 IC - Collector Current - A -10 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS125AF -2·0 -2·5 -1·0 -1·5 IB = IC / 100 t p = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 3. PRODUCT INFORMATION 3 BDW64, BDW64A, BDW64B, BDW64C, BDW64D PN.


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