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BDW63C Dataheets PDF



Part Number BDW63C
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BDW63C DatasheetBDW63C Datasheet (PDF)

BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless other.

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BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW63 BDW63A Collector-base voltage (IE = 0) BDW63B BDW63C BDW63D BDW63 BDW63A Collector-emitter voltage (IB = 0) (see Note 1) BDW63B BDW63C BDW63D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW63 V (BR)CEO Collector-emitter breakdown voltage BDW63A IC = 30 mA IB = 0 (see Note 5) BDW63B BDW63C BDW63D VCE = 30 V ICEO Collector-emitter cut-off current V CE = 30 V V CE = 40 V V CE = 50 V V CE = 60 V VCB = 45 V V CB = 60 V V CB = 80 V V CB = 100 V ICBO Collector cut-off current V CB = 120 V V CB = 45 V V CB = 60 V V CB = 80 V V CB = 100 V V CB = 120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = V CE = VCE = IB = IB = IE = 5V 3V 3V 3V 12 mA 60 mA 6A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 2 A IC = 6 A IC = 2 A IC = 2 A IC = 6 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 2.5 2.5 4 3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW63.


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