BDV65B (NPN), BDV64B (PNP)
Complementary Silicon Plastic Power Darlingtons
. . . for use as output devices in complemen...
BDV65B (
NPN), BDV64B (
PNP)
Complementary Silicon Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applications.
Features
High DC Current Gain − HFE = 1000 (min) @ 5 Adc Monolithic Construction with Built−in Base Emitter Shunt Resistors These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB IC
IB PD
TJ, Tstg
Max 100 100 5.0 10 20 0.5 125 1.0 -65 to + 150
Unit Vdc Vdc Vdc Adc
Adc W W/°C °C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.0 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON COMPLEMENTARY SILICON
POWER
TRANSISTORS 60−80−100−120 VOLTS,
125 WATTS
NPN COLLECTOR 2
PNP COLLECTOR 2,4
BASE 1
BASE 1
EMITTER 3 BDV65B
EMITTER 3 BDV64B
1 2 3
SOT−93 (TO−218) CASE 340D
...
