LAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
1.0
1 23
1 3 .7 0
• HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS
2 .5 4 BSC
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
2. 70 BSC
3 .6 0 (0 .1 4 2 ) M a x .
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
• POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
TO220M - TO220 Metal Package - Isolated SMD1 - Ceramic Surface Mount Package Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS10
VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature 60V 60V
BDS11 BDS12 80V 100V 80V 100V 5V 15A 5A 90W –65 to 200°C 200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
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Prelim. 7/00
LAB
Parameter
ICBO Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0)
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 VEB = 5V VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V
Min.
Typ.
Max.
500 500 500 1 1 1 1
Unit
mA
ICEO
mA
IEBO
mA
VCEO(sus)*
VCE(sat)* VBE(sat)* VBE* hFE* fT
BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current gain IC = 5A IC = 10A Transition frequency IC = 0.5A
IC = 100mA IB = 0.5A IB = 2.5A IB = 2.5A VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V
60 80 100 1 3 2.5 1.5 250 150
V
V V V
40 15 5 3
MHz
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS
Parameter
ton ts tr On Time Storage Time Fall Time (td + tr)
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A
Max.
0.7 1.0 0.8
Unit ms ms ms
THERMAL DATA RTHj-case RTHcase-sink RTHj-a Thermal resistance junction - case Thermal resistance case - heatsink ** Thermal resistance junction - ambient Max. 1.4°C/W Typ. 1.0°C/W Max. 80°C/W
** Smooth flat surface using thermal grease. Semelab plc.
Telephone +44(0)145.