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BDS10 Dataheets PDF



Part Number BDS10
Manufacturers Seme LAB
Logo Seme LAB
Description SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
Datasheet BDS10 DatasheetBDS10 Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SEME BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES • HERMETIC METAL OR CERAMIC PACKAGES 1.0 1 23 1 3 .7 0 • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1.

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LAB MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SEME BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES • HERMETIC METAL OR CERAMIC PACKAGES 1.0 1 23 1 3 .7 0 • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 2. 70 BSC 3 .6 0 (0 .1 4 2 ) M a x . • FULLY ISOLATED (METAL VERSION) 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) TO220M - TO220 Metal Package - Isolated SMD1 - Ceramic Surface Mount Package Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS10 VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature 60V 60V BDS11 BDS12 80V 100V 80V 100V 5V 15A 5A 90W –65 to 200°C 200°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 LAB Parameter ICBO Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) SEME BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 VEB = 5V VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V Min. Typ. Max. 500 500 500 1 1 1 1 Unit mA ICEO mA IEBO mA VCEO(sus)* VCE(sat)* VBE(sat)* VBE* hFE* fT BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current gain IC = 5A IC = 10A Transition frequency IC = 0.5A IC = 100mA IB = 0.5A IB = 2.5A IB = 2.5A VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V 60 80 100 1 3 2.5 1.5 250 150 V V V V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A Max. 0.7 1.0 0.8 Unit ms ms ms THERMAL DATA RTHj-case RTHcase-sink RTHj-a Thermal resistance junction - case Thermal resistance case - heatsink ** Thermal resistance junction - ambient Max. 1.4°C/W Typ. 1.0°C/W Max. 80°C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)145.


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